• DocumentCode
    2256166
  • Title

    A simple variational technique for estimating quantum mechanical charge redistribution effects in deep sub-micron MOS devices

  • Author

    Gunther, Noman G. ; Mutlu, Ayhan A. ; Rahman, Mahmud

  • Author_Institution
    Dept. of Electr. Eng., Santa Clara Univ., CA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    We have developed and demonstrated the application of variational methods in calculation of the effect of quantum mechanical (QM) charge confinement at the metal oxide semiconductor (MOS) Si-SiO2 interface, and its perturbation on the threshold voltage, Vth as a function of doping concentration
  • Keywords
    MIS structures; semiconductor doping; silicon; silicon compounds; variational techniques; QM charge confinement; Si-SiO2; Si-SiO2 interface; deep sub-micron MOS devices; doping concentration; quantum mechanical charge redistribution effects; threshold voltage; variational technique; Electrostatics; Integral equations; MOS devices; Poisson equations; Quantum mechanics; Schrodinger equation; Semiconductor device doping; Semiconductor process modeling; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984447
  • Filename
    984447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256166