DocumentCode :
2256166
Title :
A simple variational technique for estimating quantum mechanical charge redistribution effects in deep sub-micron MOS devices
Author :
Gunther, Noman G. ; Mutlu, Ayhan A. ; Rahman, Mahmud
Author_Institution :
Dept. of Electr. Eng., Santa Clara Univ., CA, USA
fYear :
2001
fDate :
2001
Firstpage :
94
Lastpage :
97
Abstract :
We have developed and demonstrated the application of variational methods in calculation of the effect of quantum mechanical (QM) charge confinement at the metal oxide semiconductor (MOS) Si-SiO2 interface, and its perturbation on the threshold voltage, Vth as a function of doping concentration
Keywords :
MIS structures; semiconductor doping; silicon; silicon compounds; variational techniques; QM charge confinement; Si-SiO2; Si-SiO2 interface; deep sub-micron MOS devices; doping concentration; quantum mechanical charge redistribution effects; threshold voltage; variational technique; Electrostatics; Integral equations; MOS devices; Poisson equations; Quantum mechanics; Schrodinger equation; Semiconductor device doping; Semiconductor process modeling; Substrates; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984447
Filename :
984447
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2256166
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