Title :
Charge-sheet MOSFET model with surface degeneracy and freezeout
Author :
Gu, X. ; Gildenblat, G.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
There is presently a considerable interest in surface-potential-based compact MOSFET models. These are essentially short-channel adaptations of the original charge-sheet model. Continued scaling of the MOSFET dimensions (and sometimes temperature) makes it desirable to develop MOSFET models based on Fermi-Dirac statistics. Such models are also important for SiC devices where impurity freezeout is significant
Keywords :
MOSFET; fermion systems; quantum statistical mechanics; semiconductor device models; surface potential; Fermi-Dirac statistics; SiC; charge-sheet MOSFET model; freezeout; short-channel adaptations; surface degeneracy; surface-potential-based compact MOSFET; Channel bank filters; Impurities; Integral equations; MOSFET circuits; Neodymium; Poisson equations; Silicon carbide; Statistics; Temperature distribution; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984449
