DocumentCode
2256194
Title
Charge-sheet MOSFET model with surface degeneracy and freezeout
Author
Gu, X. ; Gildenblat, G.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
2001
fDate
2001
Firstpage
102
Lastpage
105
Abstract
There is presently a considerable interest in surface-potential-based compact MOSFET models. These are essentially short-channel adaptations of the original charge-sheet model. Continued scaling of the MOSFET dimensions (and sometimes temperature) makes it desirable to develop MOSFET models based on Fermi-Dirac statistics. Such models are also important for SiC devices where impurity freezeout is significant
Keywords
MOSFET; fermion systems; quantum statistical mechanics; semiconductor device models; surface potential; Fermi-Dirac statistics; SiC; charge-sheet MOSFET model; freezeout; short-channel adaptations; surface degeneracy; surface-potential-based compact MOSFET; Channel bank filters; Impurities; Integral equations; MOSFET circuits; Neodymium; Poisson equations; Silicon carbide; Statistics; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984449
Filename
984449
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