Title :
Microscopic analysis of the impact of substrate bias on the gate current of pMOSFETs
Author :
Zanchetta, S. ; Esseni, D. ; Palestri, P. ; Selmi, L.
Author_Institution :
DIEGM, Udine Univ., Italy
Abstract :
This paper presents a detailed numerical investigation of the recently reported phenomenon of substrate enhanced hole gate current in deep submicron pMOS transistors. To this purpose, full-band Monte Carlo simulations of carrier heating and injection in the gate oxide have been carried out at different substrate voltages. Results are in good qualitative agreement with previously reported measurements, and provide a clear microscopic picture to explain the experimentally observed features of electron and hole gate currents in pMOS devices
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; Monte Carlo simulations; deep submicron pMOS transistors; gate current; gate oxide; microscopic analysis; numerical investigation; pMOSFET; substrate bias impact; substrate enhanced hole gate current; Acoustical engineering; Charge carrier processes; Degradation; Doping; Electrons; Hot carriers; MOSFETs; Microscopy; Monte Carlo methods; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984450
