• DocumentCode
    2256247
  • Title

    Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes

  • Author

    Lai, Chun-Feng ; Huang, H.W. ; Lin, C.H. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Chao, Chia-Hsin

  • Author_Institution
    Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO2/SiO2 omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photonic crystals; semiconductor thin films; thin film devices; wide band gap semiconductors; InGaN-GaN; TiO2-SiO2; enhanced vertical extraction efficiency; line-width emission spectrum; omnidirectional reflector; thin-film photonic crystal light-emitting diodes; wavelength 5 nm; Gallium nitride; Light emitting diodes; Optical buffering; Optical films; Optical microscopy; Optical surface waves; Photonic crystals; Scanning electron microscopy; Stimulated emission; Transistors; (230.3670) light-emitting diodes; (230.5298) photonic crystals;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4572329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256247