• DocumentCode
    2256255
  • Title

    Simulation of tunneling gate current in ultra-thin SOI MOSFETs

  • Author

    Fiegna, C. ; Abramo, A.

  • Author_Institution
    Dept. of Eng., Ferrara Univ., Italy
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    110
  • Lastpage
    113
  • Abstract
    Numerical simulation is applied to analyze the tunneling gate current of ultra-thin single-gate SOI MOSFETs. The results of the self-consistent solution of 1D Schrodinger and Poisson equations show that, for very thin silicon layers, the gate tunneling currents depend on the thickness of the silicon region because this significantly affects the 2D subband structure in the inversion layer
  • Keywords
    MOSFET; Poisson equation; Schrodinger equation; interface states; inversion layers; numerical analysis; semiconductor device models; silicon-on-insulator; tunnelling; 2D subband structure; Poisson equation; Schrodinger equation; Si-SiO2; gate tunneling currents; inversion layer; numerical simulation; self-consistent solution; tunneling gate current simulation; ultrathin SOI MOSFET; Circuits; Effective mass; Electrons; MOSFETs; Numerical simulation; Poisson equations; Quantization; Schrodinger equation; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984451
  • Filename
    984451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256255