Title :
Numerical study of partial-SOI LDMOSFET power devices
Author :
Park, J.M. ; Grasser, T. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
The authors discuss the dependence of the breakdown voltage and temperature distribution on the location of the silicon window. They numerically confirm that the breakdown voltage of P-SOI LDMOSFET with a silicon window under the source is higher than that of P-SOI LDMOSFET with a silicon window under the drain
Keywords :
numerical analysis; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; temperature distribution; Si-SiO2; breakdown voltage; numerical study; partial-SOI LDMOSFET power devices; temperature distribution; Breakdown voltage; Circuit faults; Integrated circuit technology; Isolation technology; Leakage current; Microelectronics; Power integrated circuits; Silicon on insulator technology; Switching circuits; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984452
