• DocumentCode
    2256273
  • Title

    Numerical study of partial-SOI LDMOSFET power devices

  • Author

    Park, J.M. ; Grasser, T. ; Kosina, H. ; Selberherr, S.

  • Author_Institution
    Inst. fur Microelectron., Technische Univ. Wien, Austria
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    The authors discuss the dependence of the breakdown voltage and temperature distribution on the location of the silicon window. They numerically confirm that the breakdown voltage of P-SOI LDMOSFET with a silicon window under the source is higher than that of P-SOI LDMOSFET with a silicon window under the drain
  • Keywords
    numerical analysis; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; temperature distribution; Si-SiO2; breakdown voltage; numerical study; partial-SOI LDMOSFET power devices; temperature distribution; Breakdown voltage; Circuit faults; Integrated circuit technology; Isolation technology; Leakage current; Microelectronics; Power integrated circuits; Silicon on insulator technology; Switching circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984452
  • Filename
    984452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256273