Faster CMOS inverter switching obtained with channel engineered asymmetrical halo implanted MOSFETs

Asymmetrically doped CMOS inverters have been designed. A mixed mode device/circuit simulator has been developed to analyze the new designs. Results show that the asymmetrically doped devices can give rise to inverter switching speeds which are several times faster than those composed of conventional CMOS. Such an increase should translate directly to similar increases in computer processor speeds. The asymmetrical designs could be achieved by changing only a few steps in an already existing CMOS process, and could therefore be used to extend the life of an existing technology, and thus save from having to construct prohibitively expensive fabrication facilities