Title :
Thermal simulation for SOI devices combining a thermal circuit model with device simulation
Author :
Wettimuny, Ramitha ; Cheng, Ming-C
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
Abstract :
This paper presents a simple methodology that combines 2D device simulation with the thermal circuit model to simulate the self-heating in SOIs. Depending on the use of either drift-diffusion (DD) or energy balance (EB) equations, results based on the simplified approaches show a time saving of 25-90% over the rigorous heat flow (HF) model which consists of the energy balance equations and heat flow equation. A 2D device simulator, S-PISCES, was used to demonstrate the approaches
Keywords :
MOSFET; circuit simulation; digital simulation; semiconductor device models; silicon-on-insulator; 2D device simulation; S-PISCES simulator; SOI devices; Si-SiO2; drift-diffusion equations; energy balance equations; self-heating; thermal circuit model; Circuit simulation; Computational modeling; Equations; Integrated circuit interconnections; Semiconductor process modeling; Silicon; Substrates; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984455
