Title :
A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology
Author :
Calligaro, Cristiano ; Liberali, Valentino ; Stabile, Alberto ; Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro
Author_Institution :
RedCat Devices srl, Milan, Italy
Abstract :
This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.
Keywords :
CMOS memory circuits; SRAM chips; radiation hardening (electronics); CMOS technology; RHBD techniques; SRAM; nuclear physics; radiation hardened; CMOS integrated circuits; CMOS technology; Protons; Prototypes; Radiation hardening; Random access memory;
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
DOI :
10.1109/ICM.2010.5696165
