Title :
A novel detection scheme for large area imaging of low energy X-rays using amorphous silicon technology
Author :
Aflatooni, K. ; Nathan, A. ; Hornsey, R.I. ; Cunningham, I.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
We report a novel low voltage direct detection scheme for low energy X-rays using hydrogenated amorphous silicon (a-Si:H) thin film heavy metal, e.g. molybdenum (Mo), Schottky diodes. Preliminary characterization, for a broad range of bias conditions and detector geometries, illustrates the design trade-offs needed to optimize performance with respect to stability, charge leakage, noise, X-ray sensitivity, and spatial resolution. For a 200 μm square detector, the measured number of electrons, for a 500 ms X-ray exposure, ranged from 107 to 108 in the 20 to 100 keV energy range. separation and collection
Keywords :
Schottky diodes; X-ray imaging; amorphous semiconductors; elemental semiconductors; hydrogen; molybdenum; silicon; 20 to 100 keV; 200 micron; 500 ms; Mo-Si:H; Schottky diodes; X-ray sensitivity; bias conditions; charge leakage; detector geometries; large area imaging; low energy X-rays; low voltage direct detection scheme; spatial resolution; stability; Amorphous silicon; Design optimization; Geometry; Leak detection; Low voltage; Optical imaging; Schottky diodes; Semiconductor thin films; X-ray detection; X-ray detectors;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635474