Title :
Conduction mechanisms for off-state leakage of poly-Si thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
Author :
Lin, Horng-Chih ; Yu, Michael ; Chen, Guo-Hua ; Huang, Tiao-Yuan ; Tan-Fu Le
Author_Institution :
Nat. Nano Device Labs., Taiwan
Abstract :
We have recently (2001) proposed a new field-induction-drain (FID) structure with a bottom sub-gate, which would make the manufacturing process more flexible. However, detailed characterization on the leakage characteristics of such bottom sub-gate devices is still lacking. We therefore carried out this study to explore this issue by fabricating and characterizing both n- and p-channel TFTs with bottom sub-gate
Keywords :
elemental semiconductors; silicon; thin film transistors; FID TFT; Si; bottom sub-gate; field-induction-drain; leakage characteristics; off-state leakage; thin-film transistors; Chemical vapor deposition; Degradation; Implants; Leakage current; Manufacturing processes; Plasma measurements; Region 6; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984457
