Title :
Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area (FBSOA)
Author :
Lee, Seung-Chul ; Oh, Jae-Keun ; Kim, Su-Sung ; Han, Min-Koo ; Choi, Yeam-lk
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
We propose a new device which suppresses parasitic latch-up effectively and also improves the turn-off characteristic by cascading the drain of an LDMOS to the cathode of an LIGBT. The FBSOA of the proposed device is large because the parasitic thyristor latch-up is eliminated even at high voltage exceeding 200 V by current saturation of the LDMOS. Also, the switching speed is improved considerably compared with conventional LIGBTs. We have verified the characteristics of the proposed device by 2-D numerical simulation (MEDICI)
Keywords :
insulated gate bipolar transistors; power MOSFET; power semiconductor switches; semiconductor device models; semiconductor device reliability; 2-D numerical simulation; 200 V; LDMOS current saturation; LDMOS/LIGBT cascading structure; MEDICI; forward biased safe operating area; high voltage; lateral insulated gate bipolar transistor; parasitic latch-up suppression; parasitic thyristor latch-up; switching :speed; turn-off characteristic; Anodes; Cathodes; Current density; Doping; Fabrication; Insulated gate bipolar transistors; Low voltage; Power integrated circuits; Switching circuits; Thyristors;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984458
