Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area (FBSOA)

Author

Lee, Seung-Chul ; Oh, Jae-Keun ; Kim, Su-Sung ; Han, Min-Koo ; Choi, Yeam-lk

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2001

fDate

2001

Firstpage

138

Lastpage

140

Abstract

We propose a new device which suppresses parasitic latch-up effectively and also improves the turn-off characteristic by cascading the drain of an LDMOS to the cathode of an LIGBT. The FBSOA of the proposed device is large because the parasitic thyristor latch-up is eliminated even at high voltage exceeding 200 V by current saturation of the LDMOS. Also, the switching speed is improved considerably compared with conventional LIGBTs. We have verified the characteristics of the proposed device by 2-D numerical simulation (MEDICI)

Keywords

insulated gate bipolar transistors; power MOSFET; power semiconductor switches; semiconductor device models; semiconductor device reliability; 2-D numerical simulation; 200 V; LDMOS current saturation; LDMOS/LIGBT cascading structure; MEDICI; forward biased safe operating area; high voltage; lateral insulated gate bipolar transistor; parasitic latch-up suppression; parasitic thyristor latch-up; switching :speed; turn-off characteristic; Anodes; Cathodes; Current density; Doping; Fabrication; Insulated gate bipolar transistors; Low voltage; Power integrated circuits; Switching circuits; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984458

Filename

984458