• DocumentCode
    2256487
  • Title

    Thin Ag film formation on thin SOI substrate

  • Author

    Iida, Shoji ; Tai, Toshiaki ; Hiraoka, Akihiko ; Noritake, Hideaki

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Osaka Sangyo Univ., Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    We show that much better results for forming a thin Ag film on an insulator can be obtained by using the direct continuous current flowing method (CCFM). This method is as follows: while forming a film on a substrate with a conventional deposition method, direct constant current is made to flow on the film via small electrodes. We report the results of using CCFM to form a thin Ag film onto an SiOx substrate and make a comparison with the ion beam deposition method
  • Keywords
    metallic thin films; nanotechnology; silicon-on-insulator; silver; surface structure; vapour deposition; Ag thin film formation; Ag-SiO2-Si; Si; Si(111) substrate; SiOx; SiOx substrate; direct continuous current flowing method; ion beam deposition; nano-scale electronic parts; small electrodes; smooth surface morphology; thin SOI substrate; Conductivity; Crystallization; Electrodes; Electrons; Insulation; Ion beams; Rough surfaces; Substrates; Surface morphology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984462
  • Filename
    984462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256487