DocumentCode :
2256512
Title :
Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces
Author :
Ushio, Jiro ; Kushida-Abdelghafar, Keiko ; Maruizumi, Takuya
Author_Institution :
Adv. Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear :
2001
fDate :
2001
Firstpage :
158
Lastpage :
160
Abstract :
Accordingly, we investigated possible NBTI mechanisms and resultant structural changes at Si/SiO2 and Si/SiOxNy interfaces. To determine if it is possible to identify a NBTI-generated structure through XPS of the interface, the N 1s core-level shifts of various structures at the Si/SiOxNy interface were also evaluated. We further considered the important role of hydrogen to localize the hole trapped in the interface
Keywords :
MIS devices; X-ray photoelectron spectra; core levels; dielectric thin films; elemental semiconductors; hole traps; interface states; silicon; silicon compounds; MOS devices; Si-SiO2; Si-SiON; Si/SiOxNy interfaces; X-ray photoelectron spectra; XPS; core-level shifts; hole trap; interface structures; negative-bias temperature instability; structural changes; ultrathin gate dielectric thin films; Bonding; Degradation; Hydrogen; Interface states; Laboratories; Niobium compounds; Nitrogen; Silicon compounds; Temperature; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984464
Filename :
984464
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2256512
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