• DocumentCode
    2256512
  • Title

    Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces

  • Author

    Ushio, Jiro ; Kushida-Abdelghafar, Keiko ; Maruizumi, Takuya

  • Author_Institution
    Adv. Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    158
  • Lastpage
    160
  • Abstract
    Accordingly, we investigated possible NBTI mechanisms and resultant structural changes at Si/SiO2 and Si/SiOxNy interfaces. To determine if it is possible to identify a NBTI-generated structure through XPS of the interface, the N 1s core-level shifts of various structures at the Si/SiOxNy interface were also evaluated. We further considered the important role of hydrogen to localize the hole trapped in the interface
  • Keywords
    MIS devices; X-ray photoelectron spectra; core levels; dielectric thin films; elemental semiconductors; hole traps; interface states; silicon; silicon compounds; MOS devices; Si-SiO2; Si-SiON; Si/SiOxNy interfaces; X-ray photoelectron spectra; XPS; core-level shifts; hole trap; interface structures; negative-bias temperature instability; structural changes; ultrathin gate dielectric thin films; Bonding; Degradation; Hydrogen; Interface states; Laboratories; Niobium compounds; Nitrogen; Silicon compounds; Temperature; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984464
  • Filename
    984464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256512