Magneto-thermopower properties in spin field-effect transistors

Thermopower properties in spin field-effect transistors (Spin-FETs) are investigated by taking into account the Rashba spin-orbit interaction (SOI) controlled by the gate voltage and the presence of a perpendicular magnetic field. It is demonstrated that the thermopower of the quasi-one dimensional electron gas formed in the spin-FET shows resonance peaks while the value of SOI and the external magnetic field varies. These peaks and their distance depend drastically on the SOI strength, the perpendicular magnetic field strength, the width of the channel and the Fermi level position shift controlled by the applied gate voltage. The effect of finite temperature is also discussed.