Title :
The problem originating from the grain boundaries in dielectric storage capacitors
Author :
Lee, Jang-Sik ; Joo, Seung-Ki
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Abstract :
In this work, we investigated the grain boundary effects directly using grain-location controlled PZT thin films. The authors show the I-V characteristics according to the length of the grain boundary. With increase of the grain boundary length from 0 μm to 16 μm, drastic increase of the leakage current and decrease of the breakdown field were observed
Keywords :
electric breakdown; ferroelectric capacitors; ferroelectric thin films; grain boundaries; lead compounds; I-V characteristics; PZT; PbZrO3TiO3; breakdown field; dielectric storage capacitors; ferroelectric capacitors; grain boundaries; grain-location controlled PZT thin films; leakage current; Capacitors; Crystallization; Degradation; Dielectric thin films; Electric breakdown; Electrodes; Grain boundaries; Material storage; Random access memory; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984466
