A simple submicron MOSFET model and its application to the analytical characterization of analog circuits

This paper presents a simple submicron MOSFET model, which can be used for handling analogue circuits analytically and predict the circuit behavior both in strong and moderate inversion working conditions. This model is an extension of Sakurai´s Npower model, where moderate inversion Mosfet characterization is also accounted for. The model parameters are evaluated by applying a fitting procedure to previously DC simulated Mosfet transistors. To prove further, the model is applied to the DC and AC characterization of an active load differential amplifier. Results obtained for 1.2V SMIC018 technology show 2-3% average error, compared to simulations with Hspice.