Title :
Hopping conduction in lithium diffused and annealed GaAs
Author :
Gudmundsson, J.T. ; Svavarsson, H.G. ; Gislason, H.P.
Author_Institution :
Sci. Inst., Iceland Univ., Reykjavik, Iceland
fDate :
30 June-5 July 2002
Abstract :
Temperature dependent conductivity and Hall effect measurements were carried out in the temperature range 30-300 K on Li-diffused and annealed GaAs. Li in-diffusion into GaAs reduces the free carrier concentration which leads to electrical conductivity as low as 10-7 S/cm. Annealing the lithium diffused samples at temperatures above 200°C significantly increases the room temperature conductivity to 1-10 S/cm, depending on the annealing temperature. In samples annealed at 300-500°C the temperature dependence of the conductivity indicates that hopping conduction sets in at temperatures below 100 K. We relate this to enhanced gallium vacancy (VGa) and gallium antisite (GaAs) concentration in Li in-diffused and annealed samples.
Keywords :
Hall effect; III-V semiconductors; annealing; carrier density; diffusion; electrical conductivity; gallium arsenide; hopping conduction; lithium; 1 to 10 S/cm; 10-7 S/cm; 30 to 300 K; 300 to 500 degC; GaAs-Li; Hall effect; annealed GaAs; carrier concentration; electrical conductivity; gallium antisite concentration; gallium vacancy; hopping conduction; lithium diffused GaAs; room temperature; Annealing; Argon; Conducting materials; Conductivity measurement; Gallium arsenide; Hydrogen; Lithium; Ohmic contacts; Temperature dependence; Virtual colonoscopy;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242715
