Hopping conduction in lithium diffused and annealed GaAs

Author

Gudmundsson, J.T. ; Svavarsson, H.G. ; Gislason, H.P.

Author_Institution

Sci. Inst., Iceland Univ., Reykjavik, Iceland

fYear

2002

fDate

30 June-5 July 2002

Firstpage

9

Lastpage

12

Abstract

Temperature dependent conductivity and Hall effect measurements were carried out in the temperature range 30-300 K on Li-diffused and annealed GaAs. Li in-diffusion into GaAs reduces the free carrier concentration which leads to electrical conductivity as low as 10^-7 S/cm. Annealing the lithium diffused samples at temperatures above 200°C significantly increases the room temperature conductivity to 1-10 S/cm, depending on the annealing temperature. In samples annealed at 300-500°C the temperature dependence of the conductivity indicates that hopping conduction sets in at temperatures below 100 K. We relate this to enhanced gallium vacancy (V_Ga) and gallium antisite (Ga_As) concentration in Li in-diffused and annealed samples.

Keywords

Hall effect; III-V semiconductors; annealing; carrier density; diffusion; electrical conductivity; gallium arsenide; hopping conduction; lithium; 1 to 10 S/cm; 10^-7 S/cm; 30 to 300 K; 300 to 500 degC; GaAs-Li; Hall effect; annealed GaAs; carrier concentration; electrical conductivity; gallium antisite concentration; gallium vacancy; hopping conduction; lithium diffused GaAs; room temperature; Annealing; Argon; Conducting materials; Conductivity measurement; Gallium arsenide; Hydrogen; Lithium; Ohmic contacts; Temperature dependence; Virtual colonoscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on

Print_ISBN

0-7803-7418-5

Type

conf

DOI

10.1109/SIM.2002.1242715

Filename

1242715