DocumentCode
2256609
Title
MEMS-based gray-scale lithography
Author
Waits, Christopher M. ; Ghodssi, Reza ; Ervin, Matthew H. ; Dubey, Madan
Author_Institution
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
fYear
2001
fDate
2001
Firstpage
182
Lastpage
185
Abstract
Micro-electro-mechanical systems (MEMS) fabrication technologies originated directly from integrated circuit (IC) fabrication. IC devices require only two-dimensional or planar structures to be fabricated, because there are no mechanical operations taking place. Therefore structures fabricated for MEMS devices have been traditionally designed with nominally vertical sidewalls (dry anisotropic etching), undercut sidewalls (wet isotropic etching), or sidewalls that have limited angles due to the crystallographic orientation of the substrate (wet anisotropic etching). Assorted novel techniques have been developed in the MEMS field that can achieve 3-D structures. Such techniques include SU-8 molding using microstereolithography, directing ions in DRIE using buried dielectric layers, and by inclined rotating UV lithography and electroplating. These techniques however are very time consuming and/or are limited in the structures that can be created, especially for large MEMS structures. A technique called gray-scale lithography, typically in diffractive optics, is applied using a one level development process to create 3-D structures in photoresist. This technique utilizes planar processing and provides additional flexibility that is not supported in conventional IC, fabrication technologies. The key components for the development of gray-scale lithography in MEMS applications are presented and include the design of the optical mask and the use of a photolithography stepper system
Keywords
micromechanical devices; nanotechnology; photolithography; photoresists; MEMS-based gray-scale lithography; optical mask; photolithography stepper system; photoresist; planar processing; Anisotropic magnetoresistance; Dielectric substrates; Dry etching; Fabrication; Gray-scale; Integrated circuit technology; Lithography; Microelectromechanical systems; Micromechanical devices; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984470
Filename
984470
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