Photoenhanced wet etching of n-gallium nitride

Author

Skriniarova, J. ; Michalka, M. ; Uherek, F. ; Kordos, P.

Author_Institution

Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2002

fDate

30 June-5 July 2002

Firstpage

56

Lastpage

59

Abstract

Photoassisted electrochemical (PEC) etching of n-doped GaN layer grown on sapphire in a KOH based solution under illumination of a Hg arc lamp is demonstrated. Smooth surfaces were obtained for a narrow range of etching conditions. It was found that this window could be extended by using etch conditions which produced "whiskers". Subsequent post treatment in developer AZ 400 K and KOH solution was used to remove these whiskers. An influence of the surface treatment of GaN by wet chemical etching prior to the Schottky barrier metal deposition was investigated.

Keywords

III-V semiconductors; Schottky barriers; etching; gallium compounds; photoelectrochemistry; whiskers (crystal); wide band gap semiconductors; Al₂O₃; GaN; Hg arc lamp illumination; KOH based solution; Schottky barrier metal deposition; n-doped GaN layer; photoassisted electrochemical etching; photoenhanced wet etching; sapphire substrate; surface treatment; whiskers; Chemicals; Dry etching; Gallium nitride; Optical materials; Optical surface waves; Semiconductor materials; Substrates; Surface emitting lasers; Surface morphology; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on

Print_ISBN

0-7803-7418-5

Type

conf

DOI

10.1109/SIM.2002.1242725

Filename

1242725