Title :
Pt-Ga ohmic contacts to n-ZnO using focused ion beams
Author :
Inumpudi, Aravind ; Iliadis, Agis A. ; Krishnamoorthy, Soumya ; Choopun, Supab ; Vispute, R.D. ; Venkatesan, Thirumalai
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
High quality Pt ohmic contacts on unintentionally doped n-type ZnO epitaxial layers, grown by pulsed laser deposition, are reported. The contacts were formed by using Ga focused ion beam surface-modification and Pt direct-write metal deposition. Contact resistance values, measured by the transmission line method, produced values as low as 3×10-4 Ωcm2 without any annealing. An optimum surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through a Ga-ZnO thin surface layer
Keywords :
II-VI semiconductors; contact resistance; focused ion beam technology; gallium; metallisation; ohmic contacts; platinum; surface treatment; tunnelling; wide band gap semiconductors; zinc compounds; Ga focused ion beam surface modification; Ga-ZnO thin surface layer; Pt direct-write metal deposition; Pt-Ga ohmic contacts; ZnO-Ga-Pt; contact resistance; current transport mechanism; n-ZnO epitaxial layers; optimum surface-modification dosage window; transmission line method; tunneling; Contact resistance; Electrical resistance measurement; Epitaxial layers; Ion beams; Ohmic contacts; Optical pulses; Pulsed laser deposition; Surface resistance; Transmission line measurements; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984480
