Title :
Microanalysis of Ni/Si ohmic contacts to n-SiC
Author :
Scire, J. ; Wagstaffe, D. ; Prenatt, M. ; Iliadis, A.A. ; Jones, K.A. ; Wood, M.C. ; Kirchner, K.W. ; Zheleva, T.S. ; Ervin, M.H. ; Geil, B.R.
Author_Institution :
ECE Dept., Maryland Univ., College Park, MD, USA
Abstract :
The authors study the complicated ohmic contact formation process by conducting a complete microanalysis of the Ni contact containing various amounts of Si (with the Si:Ni ratios being 0:1, 1:2 and 1:1). The morphology of the annealed surface and cleaved cross sections are observed by SEM and/or AFM; the structure is studied using X-ray diffraction and TEM, and the chemistry is determined using Auger depth profiles
Keywords :
Auger electron spectra; X-ray diffraction; annealing; atomic force microscopy; chemical analysis; interface structure; nickel; nickel compounds; ohmic contacts; scanning electron microscopy; silicon; silicon compounds; surface chemistry; surface topography; transmission electron microscopy; wide band gap semiconductors; AES; AFM; Auger depth profiles; SEM; SiC; SiC-Ni-Si; SiC-NiSi; TEM; X-ray diffraction; XRD; annealed surface morphology; cleaved cross sections; microanalysis; n-SiC/Ni-Si; ohmic contact formation process; Adhesives; Annealing; Contact resistance; Nickel; Ohmic contacts; Semiconductor films; Silicides; Silicon carbide; Surface morphology; Surface resistance;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984481
