• DocumentCode
    2256830
  • Title

    The oscillating electrical domains in the 6H-SiC electron unipolar structures

  • Author

    Sankin, V.I. ; Shkrebiy, P.P.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    227
  • Lastpage
    230
  • Abstract
    The discovery of negative differential conductivity (NDC) and mobile domains due to Bloch oscillations are important results in the study of strong field transport in SiC superlattices. The presence of unusual mobile domains creating the avalanche breakdown may be a source of radiation in the 109-1012 Hz range
  • Keywords
    avalanche breakdown; band structure; electric domains; high field effects; semiconductor diodes; semiconductor superlattices; silicon compounds; triodes; wide band gap semiconductors; 109 to 1012 Hz; 6H-SiC; Bloch oscillations; I-V characteristics; NDC; SiC; avalanche breakdown; electron unipolar structures; miniband structure; mobile electrical domains; n+-n--n+ diode structure; n+-n--n+ triode structure; negative differential conductivity; strong field transport; superlattices; Conductivity; Diodes; Effective mass; Electrons; Frequency; Lattices; Narrowband; Scattering; Semiconductor superlattices; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984482
  • Filename
    984482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2256830