Title :
3D-integration of silicon devices: A key technology for sophisticated products
Author :
Klumpp, A. ; Ramm, P. ; Wieland, R.
Author_Institution :
Nanomater., Devices & Silicon Process., Fraunhofer Inst. for Reliability & Microintegration, Munich, Germany
Abstract :
3D integration is a key solution to the predicted performance increase of future electronic systems. It offers extreme miniaturization and fabrication of More than Moore products. This can be accomplished by the combination of Through-Silicon-Via (TSV) technologies for shortened electrical signal lines and Solid Liquid Interdiffusion (SLID) for highly reliable assembly. Depending on the chosen technology concept, TSVs are filled with either tungsten or copper metal. Thinning of silicon as part of the process flow enables devices as thin as 30 ??m, so multilayer stacking will result in ultra-thin systems. All these 3D integration concepts focus on wafer level processing to achieve the highest miniaturization degree and highest processing reliability as well as enabling high volume cost-effective fabrication.
Keywords :
integrated circuit technology; three-dimensional integrated circuits; 3D integration; copper metal; electrical signal lines; electronic systems; key technology; multilayer stacking; process flow; processing reliability; silicon devices; solid liquid interdiffusion; sophisticated products; through-silicon-via technologies; tungsten; ultrathin systems; volume cost-effective fabrication; wafer level processing; Assembly; Dielectric substrates; Fabrication; Isolation technology; Nanomaterials; Plasma temperature; Silicon devices; Stacking; Through-silicon vias; Wafer bonding; Solid Liquid Interdiffusion; Through-Silicon-Via;
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location :
Dresden
Print_ISBN :
978-1-4244-7054-9
DOI :
10.1109/DATE.2010.5457085
