Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer

Author

Deligeorgis, George ; Gallis, Spyros ; Androulidaki, M. ; Cengher, D. ; Hatzopoulos, Zahanas ; Alexe, Marin ; Dragoi, Viorel ; Kyriakis-Bitzaros, Efstathios D. ; Halkias, George ; Peiro, Francisca ; Georgakilas, Alexandros

Author_Institution

Dept. of Phys., Crete Univ., Greece

fYear

2002

fDate

30 June-5 July 2002

Firstpage

125

Lastpage

128

Abstract

MBE grown GaAs wafers were bonded, using spin on glass, on CMOS and plain Si wafers, GaAs substrate was removed to provide a thin layer of GaAs material, on top of silicon, for device processing. Structural investigation of the GaAs filmoil was done using TEM. Material quality was further investigated using photoluminescence measurements. Built in strain was measured using photoreflectance measurements for a range of temperatures and compared to that of an epitaxially grown GaAs on Si. High quality material that is nearly stress free at room temperature was successfully integrated with Si using the proposed method.

Keywords

III-V semiconductors; gallium arsenide; photoluminescence; photoreflectance; semiconductor epitaxial layers; semiconductor heterojunctions; transmission electron microscopy; wafer bonding; 293 to 298 K; CMOS; GaAs filmoil; GaAs wafers; GaAs-Si; GaAs/Si heterostructure; MBE; Si wafers; TEM; photoluminescence; room temperature; wafer bonding; CMOS process; Gallium arsenide; Glass; Molecular beam epitaxial growth; Silicon; Strain measurement; Stress measurement; Substrates; Temperature distribution; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on

Print_ISBN

0-7803-7418-5

Type

conf

DOI

10.1109/SIM.2002.1242739

Filename

1242739