• DocumentCode
    2257092
  • Title

    Ultrafast dynamics of semiconductor interband transitions in THz fields up to 4 MV/cm

  • Author

    Junginger, F. ; Schubert, O. ; Schmidt, C. ; Mährlein, S. ; Mayer, B. ; Sell, A. ; Huber, R. ; Leitenstorfer, A.

  • Author_Institution
    Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Phase-locked multi-THz transients bias semiconductors far above the usual threshold for dielectric breakdown. Few-cycle NIR pulses synchronized to the THz transients on an as-timescale, probe interband transitions under electric fields of 4 MV/cm.
  • Keywords
    electric breakdown; high-speed optical techniques; nonlinear optics; optical phase locked loops; electric fields; few-cycle NIR pulses; phase-locked multi-THz transients bias semiconductors dielectric breakdown; probe interband transitions; semiconductor interband transitions; ultrafast dynamics; Electric fields; Frequency modulation; Indium phosphide; Nonlinear optics; Optimized production technology; Probes; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2257092