• DocumentCode
    2257101
  • Title

    High field transport of photo-injected electrons in GaAs: Transition from ballistic to drift motion

  • Author

    Bowlan, P. ; Kuehn, W. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hey, R. ; Flytzanis, C.

  • Author_Institution
    Max-Bom-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Using visible/NIR pump and strong THz probe pulses, we observe the THz field emitted by accelerated photoelectrons in n-type GaAs. A transition from ballistic to drift motion is observed.
  • Keywords
    III-V semiconductors; ballistic transport; gallium arsenide; high field effects; infrared spectra; terahertz wave spectra; visible spectra; GaAs; accelerated photoelectrons; ballistic motion; drift motion; high field transport; n-type GaAs; photoinjected electrons; strong terahertz probe pulses; terahertz field; visible-NIR pump; Acceleration; Delay; Doping; Gallium arsenide; Probes; Pulse measurements; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2257101