Title :
High field transport of photo-injected electrons in GaAs: Transition from ballistic to drift motion
Author :
Bowlan, P. ; Kuehn, W. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hey, R. ; Flytzanis, C.
Author_Institution :
Max-Bom-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
Using visible/NIR pump and strong THz probe pulses, we observe the THz field emitted by accelerated photoelectrons in n-type GaAs. A transition from ballistic to drift motion is observed.
Keywords :
III-V semiconductors; ballistic transport; gallium arsenide; high field effects; infrared spectra; terahertz wave spectra; visible spectra; GaAs; accelerated photoelectrons; ballistic motion; drift motion; high field transport; n-type GaAs; photoinjected electrons; strong terahertz probe pulses; terahertz field; visible-NIR pump; Acceleration; Delay; Doping; Gallium arsenide; Probes; Pulse measurements; Scattering;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
