DocumentCode
2257201
Title
Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates
Author
Kusano, T. ; Satake, A. ; Fujiwara, K. ; Shimomura, S. ; Kitada, T. ; Hiyamizu, S.
Author_Institution
Kyushu Institute of Technology
fYear
2002
fDate
30 June-5 July 2002
Firstpage
173
Lastpage
176
Keywords
Epitaxial layers; Excitons; Gallium arsenide; Laser excitation; Optical scattering; Particle scattering; Photoluminescence; Semiconductor lasers; Substrates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN
0-7803-7418-5
Type
conf
DOI
10.1109/SIM.2002.1242749
Filename
1242749
Link To Document