DocumentCode :
2257201
Title :
Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates
Author :
Kusano, T. ; Satake, A. ; Fujiwara, K. ; Shimomura, S. ; Kitada, T. ; Hiyamizu, S.
Author_Institution :
Kyushu Institute of Technology
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
173
Lastpage :
176
Keywords :
Epitaxial layers; Excitons; Gallium arsenide; Laser excitation; Optical scattering; Particle scattering; Photoluminescence; Semiconductor lasers; Substrates; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242749
Filename :
1242749
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2257201
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