DocumentCode
2257227
Title
The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications
Author
Hou, ChunLin ; Lee, Joseph Yamin
Author_Institution
Tsing-Hua University
fYear
2002
fDate
30 June-5 July 2002
Firstpage
181
Lastpage
184
Keywords
Capacitance-voltage characteristics; Dielectric thin films; Ferroelectric materials; Hysteresis; Insulation; Nonvolatile memory; Polarization; Pollution measurement; Sputtering; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN
0-7803-7418-5
Type
conf
DOI
10.1109/SIM.2002.1242751
Filename
1242751
Link To Document