DocumentCode :
2257227
Title :
The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications
Author :
Hou, ChunLin ; Lee, Joseph Yamin
Author_Institution :
Tsing-Hua University
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
181
Lastpage :
184
Keywords :
Capacitance-voltage characteristics; Dielectric thin films; Ferroelectric materials; Hysteresis; Insulation; Nonvolatile memory; Polarization; Pollution measurement; Sputtering; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242751
Filename :
1242751
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2257227
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