Title :
Low-bandgap nitrides: Issues and applications
Author_Institution :
University of California
fDate :
30 June-5 July 2002
Keywords :
Doping; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Light emitting diodes; Low voltage; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Quantum well lasers;
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
DOI :
10.1109/SIM.2002.1242766
