Precise tuning of the switching field in ´implantation patterned´ Co/Pt multilayers

Author

Metlushko, V.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Chicago, IL

fYear

2001

fDate

2001

Firstpage

331

Lastpage

333

Abstract

[Co4/Pt10]n multilayers with strong out-of-plane magnetic anisotropy were fabricated by magnetron sputtering for Pt and e-beam deposition for Co on a Si/SiO₂ substrate with a 100 Å Pt buffer layer in UHV. The patterning of submicron periodic arrays was done using 30 keV He ion implantation. The technique provides an excellent opportunity for precise tuning of the switching field in ´implantation patterned´ Co/Pt by controlling the distance between irradiated areas and by controlling the irradiation dose. The results of systematic characterization of arrays for different doses ranging from 10¹⁵ to 5×10¹⁶ ions/cm are presented

Keywords

arrays; cobalt; electron beam deposition; ion implantation; magnetic anisotropy; magnetic domains; magnetic hysteresis; magnetic multilayers; magnetic switching; platinum; sputter deposition; 100 A; 30 keV; Co-Pt; He ion implantation; Pt buffer layer; Si; Si-SiO₂; Si/SiO₂ substrate; e-beam deposition; hysteresis loops; implantation patterned Co/Pt multilayers; irradiation dose control; magnetic domains; magneto-optical images; magnetron sputtering; out-of-plane magnetic anisotropy; submicron periodic arrays; switching field tuning; Helium; Magnetic anisotropy; Magnetic domains; Magnetic films; Magnetic materials; Magnetic multilayers; Materials science and technology; Nonhomogeneous media; Optical films; Perpendicular magnetic anisotropy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984507

Filename

984507