DocumentCode
2257522
Title
Roadmap of the Flash Memory
Author
Shirota, Riichiro
Author_Institution
Toshiba, Japan
fYear
2006
fDate
2006
Abstract
It has become 19 years, since the development of the NAND Flash started using 0.7..m rule in 1987. The speed of the scaling has been very fast and the period of the product of the new generation is less than 2 years. Now, design rule of the NAND Flash memory has become less than 70nm. There are some problems to interfere with the scaling of the memory cell. Basic idea to overcome these problems will be introduced in this talk.
Keywords
Biographies; Flash memory; Large-scale systems; Speech;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on
Conference_Location
Taipei, Taiwan
ISSN
1087-4852
Print_ISBN
0-7695-2572-5
Type
conf
DOI
10.1109/MTDT.2006.27
Filename
1654567
Link To Document