• DocumentCode
    2257575
  • Title

    Non-volatile Semiconductor Memory Technology in Nanotech Era

  • Author

    Lu, Chih-Yuan

  • Author_Institution
    Macronix, Taiwan
  • fYear
    2006
  • fDate
    2-4 Aug. 2006
  • Abstract
    Non-volatile semiconductor memory, especially Flash memory has seen explosive growth in recent years because of unceasing demand for higher performance and density for cell phone, digital still camera, camcorder, MP3, consumer electronics and automotive applications. Despite the rosy outlook, both NOR and NAND Flash technologies face steep challenges to further scale down into the sub-45nm nodes. At 45nm node both technologies confront fundamental physics limitations - the non-scalability of tunnel oxide and cross talk between floating gates. This paper examines the scaling limits for Flash memories and surveys potential solutions that promise to carry nonvolatile memories further down the Moore’s curve at 32nm node and beyond.
  • Keywords
    Automotive applications; Cellular phones; Consumer electronics; Digital audio players; Digital cameras; Explosives; Flash memory; Nonvolatile memory; Semiconductor memory; Video equipment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on
  • ISSN
    1087-4852
  • Print_ISBN
    0-7695-2572-5
  • Type

    conf

  • DOI
    10.1109/MTDT.2006.21
  • Filename
    1654568