Compact model of memristors and its application in computing systems

Author

Li, Hai Helen ; Hu, Miao

Author_Institution

Dept. of Electr. & Comput. Eng., Polytech. Inst. of New York Univ., Brooklyn, OH, USA

fYear

2010

fDate

8-12 March 2010

Firstpage

673

Lastpage

678

Abstract

In this paper, we present a compact model of the spintronic memristor based on the magnetic-domain-wall motion mechanism for circuit design. Our model also takes into account the variations of material parameters and fabrication process, which significantly affects the actual electrical characteristics of a memristor in nano-scale technologies. Our proposed model can be easily implemented by Verilog-A languages and compatible to SPICE-based simulation. Based on our model, we also show some potential applications of memristor in computing system, including the detailed analysis and optimizations based on our proposed model.

Keywords

circuit optimisation; magnetic domain walls; magnetoelectronics; memristors; nanotechnology; network analysis; SPICE; Verilog-A languages; circuit design; computing systems; electrical characteristic; fabrication process variation; magnetic domain wall motion mechanism; magnetic tunneling junction; material parameter variation; nanoscale technology; spin torque; spintronic memristor; Circuit simulation; Circuit synthesis; Computational modeling; Computer applications; Electric variables; Fabrication; Hardware design languages; Magnetic materials; Magnetoelectronics; Memristors; Memristor; compact model; magnetic tunneling junction (MTJ); spin torque; spintronic;

fLanguage

English

Publisher

ieee

Conference_Titel

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010

Conference_Location

Dresden

ISSN

1530-1591

Print_ISBN

978-1-4244-7054-9

Type

conf

DOI

10.1109/DATE.2010.5457115

Filename

5457115