Title :
Spintronic memristor devices and application
Author :
Wang, Xiaobin ; Chen, Yiran
Author_Institution :
Seagate Technol., Bloomington, MN, USA
Abstract :
Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of nanoscale memristors. Utilizing its unique device behavior, the paper explores spintronic memristor potential applications in multibit data storage and logic, novel sensing scheme, power management and information security.
Keywords :
CMOS integrated circuits; magnetoelectronics; memristors; torque; CMOS; information security; multibit data storage; nanoscale memristors; power management; spin torque memristors; spintronic memristor devices; spintronic memristor potential applications; CMOS logic circuits; Commercialization; Controllability; Magnetic devices; Magnetic materials; Magnetization; Magnetoelectronics; Memory; Memristors; Torque; memristor; power management; security; sensing; spin torque; spintronic; storage;
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location :
Dresden
Print_ISBN :
978-1-4244-7054-9
DOI :
10.1109/DATE.2010.5457118
