Giant AC Stark shift in germanium

Author

Kolata, K. ; Köster, N. ; Woscholski, R. ; Lange, C. ; Chatterjee, S. ; Isella, G. ; Chrastina, D. ; Von Känel, H.

Author_Institution

Fac. of Phys. & Mater. Sci. Center, Philipps-Univ. Marburg, Marburg, Germany

fYear

2011

fDate

1-6 May 2011

Firstpage

1

Lastpage

2

Abstract

We observe a strong ultrafast AC Stark shift of the direct band transition in strained germanium quantum wells grown on silicon. At 150 meV, the maximum measured blue shift of the band edge is one order of magnitude larger than typically found in III-V materials. The power dependence shows a linear behavior between the electrical field intensity and the magnitude of the shift which is in good agreement with a dressed-exciton model. The coherent excitation dynamics in germanium are thus mainly governed by the direct transitions.

Keywords

Stark effect; elemental semiconductors; excitons; germanium; high-speed optical techniques; semiconductor quantum wells; spectral line shift; Ge; Si; blue shift; coherent excitation dynamics; direct band transition; dressed-exciton model; electrical field intensity; electron volt energy 150 meV; silicon substrate; strained germanium quantum wells; strong ultrafast AC Stark shift; Absorption; Optical pumping; Photonics; Silicon; Stimulated emission; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2011 Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4577-1223-4

Type

conf

Filename

5951356