• DocumentCode
    2257788
  • Title

    Metal/SrBi2Ta2O9/SiN/Si ferroelectric DRAM (FEDRAM) transistors with ultrathin SiN buffer and long retention

  • Author

    Kim, Kwang-Ho ; Han, Jin-Ping ; Jun, Soon-Won ; Ma, T.P.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    373
  • Lastpage
    376
  • Abstract
    This paper reports our recent results on FErroelectric DRAM (FEDRAM) transistors that employ a record-thin buffer layer. They also withstand realistic thermal budgets as well as forming-gas anneal conditions that are compatible with CMOS processes. The fabricated devices exhibit comfortable memory windows, fast switching speeds, and long retention times that are suitable for advanced FEDRAM applications
  • Keywords
    CMOS memory circuits; DRAM chips; MOSFET; annealing; bismuth compounds; elemental semiconductors; ferroelectric storage; ferroelectric switching; silicon; silicon compounds; strontium compounds; CMOS processes; FEDRAM; SrBi2Ta2O9-SiN-Si; advanced FEDRAM applications; buffer layer; fast switching speeds; forming-gas anneals; long retention; memory windows; metal/SrBi2Ta2O9/SiN/Si ferroelectric DRAM; thermal budgets; transistors; ultrathin SiN buffer; Annealing; Buffer layers; Capacitors; FETs; Ferroelectric materials; Hysteresis; Pulse measurements; Random access memory; Silicon compounds; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984520
  • Filename
    984520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2257788