Title :
Metal/SrBi2Ta2O9/SiN/Si ferroelectric DRAM (FEDRAM) transistors with ultrathin SiN buffer and long retention
Author :
Kim, Kwang-Ho ; Han, Jin-Ping ; Jun, Soon-Won ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
This paper reports our recent results on FErroelectric DRAM (FEDRAM) transistors that employ a record-thin buffer layer. They also withstand realistic thermal budgets as well as forming-gas anneal conditions that are compatible with CMOS processes. The fabricated devices exhibit comfortable memory windows, fast switching speeds, and long retention times that are suitable for advanced FEDRAM applications
Keywords :
CMOS memory circuits; DRAM chips; MOSFET; annealing; bismuth compounds; elemental semiconductors; ferroelectric storage; ferroelectric switching; silicon; silicon compounds; strontium compounds; CMOS processes; FEDRAM; SrBi2Ta2O9-SiN-Si; advanced FEDRAM applications; buffer layer; fast switching speeds; forming-gas anneals; long retention; memory windows; metal/SrBi2Ta2O9/SiN/Si ferroelectric DRAM; thermal budgets; transistors; ultrathin SiN buffer; Annealing; Buffer layers; Capacitors; FETs; Ferroelectric materials; Hysteresis; Pulse measurements; Random access memory; Silicon compounds; Space vector pulse width modulation;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984520
