Gallium nitride on silicon

Author

Borges, Ric ; Piner, Edwin ; Vescan, Andrei ; Brown, J.D. ; Singhal, Sameer ; Therrien, Robert

Author_Institution

Nitronex Corp., Raleigh, NC, USA

fYear

2001

fDate

2001

Firstpage

382

Lastpage

383

Abstract

In this paper we report on the development of GaN grown directly on standard Si wafers. Using a transition layer scheme, which addresses both the thermal expansion and lattice mismatch in this material system, excellent epitaxial film quality has been demonstrated, as evidenced by 2DEG electron mobilities. These films are grown by MOCVD on 4" Si substrates using a proprietary reactor design

Keywords

III-V semiconductors; MOCVD; electron mobility; elemental semiconductors; gallium compounds; high electron mobility transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; silicon; thermal expansion; two-dimensional electron gas; vapour phase epitaxial growth; wide band gap semiconductors; 2DEG electron mobilities; 4 in; GaN; GaN-Si; HEMTs; MOCVD; Si; Si substrates; Si wafers; epitaxial film quality; gallium nitride; lattice mismatch; silicon; thermal expansion; transition layer scheme; Electron mobility; Gallium nitride; III-V semiconductor materials; Lattices; MOCVD; Semiconductor films; Silicon; Standards development; Substrates; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984522

Filename

984522