DocumentCode
2257883
Title
The use of MOSFETS in high-dose-rate radiation environments
Author
Severns, Rudy ; Blanchard, Richard
Author_Institution
Springtime Enterprises
fDate
April 28 1986-1986
Firstpage
9
Lastpage
12
Abstract
In military switching applications, the power MOSFET has become the device of choice. Military applications require survival, if not operation, during the prompt gamma pulse resulting from a nuclear explosion. This paper discusses the behavior of MOSFETs in high-dose-rate radiation environments, relating the performance to the device´s structure. This understanding is used as a starting point for improving system performance by optimizing both device and circuit parameters.
Keywords
Bipolar transistors; Impedance; MOSFET; Resistors; Snubbers; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1986 IEEE
Conference_Location
New Orleans, Louisiana, USA
ISSN
1048-2334
Type
conf
DOI
10.1109/APEC.1986.7073304
Filename
7073304
Link To Document