Title :
Very high quality p-type AlxGa1-xN/GaN superlattice
Author :
Yasan, Alireza ; Razeghi, Manijeh
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
Very high quality p-type AlGaN/GaN superlattices have been achieved through optimization of Mg flow and period of superlattice. A theoretical model was used to predict the performance of superlattice with different Al compositions and various periods. The model has based on polarization charge induced by spontaneous polarization and piezoelectric effect (due to lattice mismatch and thermal strain) which leads to enhancement in acceptor ionization and therefore carrier concentration. Piezoelectric coefficients for GaN system are about one order of magnitude larger than other group III-V semiconductors leading to a huge electric field
Keywords :
III-V semiconductors; aluminium compounds; carrier density; dielectric polarisation; gallium compounds; piezoelectric semiconductors; semiconductor superlattices; AlGaN-GaN; acceptor ionization; carrier concentration; huge electric field; lattice mismatch; piezoelectric effect; polarization charge; spontaneous polarization; thermal strain; very high quality p-type AlxGa1-xN/GaN superlattice performance; Aluminum gallium nitride; Capacitive sensors; Gallium nitride; III-V semiconductor materials; Ionization; Lattices; Piezoelectric effect; Piezoelectric polarization; Predictive models; Superlattices;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984525
