Comparison of electrical and reliability characteristics of different tunnel oxides in SONOS flash memory

Author

Wu, Jia-Lin ; Chien, Hua-Ching ; Liao, Chien-Wei ; Wu, Cheng-Yen ; Lee, Chih-Yuan ; Wei, Houng-Chi ; Chen, Shih-Hsien ; Hwang, Hann-Ping ; Pittikoun, Saysamone ; Cho, Travis ; Kao, Chin-Hsing

Author_Institution

Chung-Cheng Inst. of Technol., Nat. Defense Univ., Taoyuan

fYear

2006

fDate

2-4 Aug. 2006

Lastpage

84

Abstract

The characteristics of polysilicon-oxide-nitride-oxide-silicon (SONOS) devices with different tunnel oxides are studied. The tunnel oxide fabricated by high-temperature oxide (HTO) with additional NO annealing treatment (HTO (NO*)) has better performance than that fabricated by HTO only and in-situ steam generated oxide (ISSG) including operation window, retention, and endurance. Besides, the properties of charge-to-breakdown are also observed. The study can provide a straightforward way of reliability for future flash memory application

Keywords

annealing; flash memories; integrated circuit reliability; semiconductor-insulator-semiconductor devices; SONOS flash memory; annealing treatment; electrical characteristics; high-temperature oxide; in-situ steam generated oxide; polysilicon-oxide-nitride-oxide-silicon devices; reliability characteristics; tunnel oxides; Annealing; CMOS technology; Dielectric substrates; EPROM; Flash memory; Leakage current; Nitrogen; Nonvolatile memory; SONOS devices; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on

Conference_Location

Taipei

ISSN

1087-4852

Print_ISBN

0-7695-2572-5

Type

conf

DOI

10.1109/MTDT.2006.8

Filename

1654585