• DocumentCode
    2258030
  • Title

    Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2

  • Author

    Liu, Boyang ; Ho, Seng-Tiong

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A new approach for direct sub-10 nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9 nm.
  • Keywords
    III-V semiconductors; indium compounds; nanolithography; sol-gel processing; spin coating; zirconium compounds; III-V compound semiconductor; InP; ZrO2; direct pattern transfer; etching selectivity; nanolithography; sol-gel; spin-coated ZrO2; wavelength 10 nm; Dry etching; III-V semiconductor materials; Indium phosphide; Lithography; Nanolithography; Plasma applications; Plasma temperature; Resists; Semiconductor devices; Zirconium; (110.4235) Nanolithography; (160.6060) Solgel; (220.4241) Nanostructure fabrication;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4572414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258030