DocumentCode
2258058
Title
Nonlinear effects of RF interference in SC circuits
Author
Crovetti, Paolo S. ; Fiori, Franco
Author_Institution
Dip. di Elettronica, Politecnico di Torino, Italy
Volume
2
fYear
2005
fDate
28 Aug.-2 Sept. 2005
Abstract
In this paper, the nonlinear effects which are induced by radio-frequency interference (RFI) in switched capacitor (SC) circuits are investigated. In particular, high frequency distortion mechanisms in MOS switches are highlighted and predicted by a new analytical model. Such a model is employed in order to evaluate RFI-induced errors in a complex SC circuit and model predictions are compared with the results of time domain computer simulations.
Keywords
MOS integrated circuits; circuit complexity; integrated circuit modelling; radiofrequency interference; switched capacitor networks; MOS switches; RF interference; RFI induced errors; SC circuits; high frequency distortion mechanism; nonlinear effects; radiofrequency interference; switched capacitor circuits; Analytical models; Electromagnetic interference; MOS capacitors; Nonlinear distortion; Predictive models; Radio frequency; Radiofrequency interference; Switched capacitor circuits; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN
0-7803-9066-0
Type
conf
DOI
10.1109/ECCTD.2005.1522987
Filename
1522987
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