DocumentCode
2258167
Title
Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors
Author
Hsieh, Chi-Ti ; Citrin, D.S. ; Ruden, P.P.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
The photocurrents of carbon-nanotube field-effect transistors are small due to the small exciton ionization rate and large exciton nonradiative-decay rate, and the photocurrent gain is small for the long-channel devices.
Keywords
carbon nanotubes; excitons; field effect transistors; nanoelectronics; nanotube devices; photoconductivity; photoexcitation; photoionisation; ambipolar carbon-nanotube field-effect transistors; exciton ionization rate; exciton nonradiative-decay rate; long-channel devices; near-field photoexcitation; photoconductivity; photocurrent gain; CNTFETs; Carbon nanotubes; Charge carrier processes; Differential equations; Excitons; FETs; Ionization; Optical devices; Photoconductivity; Voltage; (040.5150) Photoconductivity; (230.2090) Electro-optical devices;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572420
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