Title :
Ultra low-power design techniques using special SOI MOS diodes
Author :
Levacq, D. ; Liber, C. ; Dessard, V. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we propose new design techniques to reduce static dissipation by using transistors in very weak inversion regimes. Two practical applications are considered: level keepers for Multi-threshold CMOS circuits (MTCMOS) and charge pump circuits.
Keywords :
CMOS memory circuits; MIS devices; MOSFET; elemental semiconductors; integrated circuit design; leakage currents; low-power electronics; power transistors; semiconductor diodes; silicon-on-insulator; SOI MOS diodes; Si-SiO2; charge pump circuits; level keepers; multithreshold CMOS circuits; static dissipation; ultra low-power design; CMOS memory integrated circuits; Integrated circuit design; Leakage currents; MIS devices; MOSFETs; Power transistors; Semiconductor diodes; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242881
