• DocumentCode
    2258264
  • Title

    Fully-depleted SOI process optimization for 60 nm CMOS transistors

  • Author

    Fenouillet-Beranger, C. ; Fruleux, F. ; Talbot, A. ; Tosti, L. ; Palla, R. ; Casse, M. ; Carriere, N. ; Grouillet, A. ; Raynaud, C. ; Giffard, B. ; Skotnicki, T.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    In this paper, we propose to study the main important technological parameters (Tsi, film doping and gate oxide influence) to give process orientations for 60nm gate lengths CMOS transistors optimization.
  • Keywords
    CMOS integrated circuits; MOSFET; elemental semiconductors; niobium; semiconductor doping; semiconductor thin films; silicon; silicon-on-insulator; 60 nm; CMOS transistors; SOI; Si-SiO2; Si:Nb; film doping; gate oxide influence; optimization; CMOS integrated circuits; MOSFETs; Niobium; Semiconductor device doping; Semiconductor films; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242885
  • Filename
    1242885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258264