Title :
Strain energy band engineering approach to AlN/GaN/InN heterojunction devices
Author :
Shur, Michael S. ; Gaska, Remis ; Yang, J.W. ; Simin, G. ; Khan, Asif
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The authors\´ results clearly demonstrate that quaternary Alx InyGa1-x-yN layers can be used to improve the performance of heterojunction devices by controlling strain and/or lattice mismatch to GaN. They also demonstrated that In incorporation in the ternary layers significantly improves their structural and optical properties. The quaternary AlInGaN layers can be lattice matched either to GaN, AlGaN or AlInGaN by a proper selection of alloy compositions. This "strain energy band engineering" approach has allowed them to develop novel GaN-based transistors, UV LEDs, and solar blind photodetectors
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; internal stresses; junction gate field effect transistors; light emitting diodes; photodetectors; reviews; semiconductor epitaxial layers; semiconductor heterojunctions; wide band gap semiconductors; AlGaN; AlInGaN; FET; GaN; GaN-based transistors; UV LED; composition dependence; device characterization; device design; epilayer; heterojunction devices; heterojunction field-effect transistors; lattice mismatch; optical properties; quaternary layers; review; solar blind photodetector; strain energy band engineering; structural properties; Aluminum gallium nitride; Capacitive sensors; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Optical sensors; Power engineering and energy; Quantum well devices; Temperature sensors;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984539
