Title :
Effect of photo-assisted RIE damage in GaN Schottky structures
Author :
Mouffak, Z. ; Trombetta, L.
Abstract :
The authors present a study on reactive ion etching- (RIE-) induced damage in GaN using simple Schottky structures and a BCl3 /Cl2/N2 gas mixture. They also perform a comparative investigation between RIE and photo-assisted RIE. Investigation of GaN surface composition using X-ray photoelectron spectroscopy (XPS) suggests that surface stoichiometry-related electrical and chemical surface damage is lower for PA-RIE when compared with RIE
Keywords :
III-V semiconductors; X-ray photoelectron spectra; gallium compounds; photochemistry; sputter etching; stoichiometry; surface chemistry; surface composition; wide band gap semiconductors; BCl3-Cl2-N2; BCl3/Cl2/N2 gas mixture; GaN; I-V characteristics; PA-RIE; RIE-induced damage; Schottky diodes; Schottky structures; X-ray photoelectron spectroscopy; XPS; chemical surface damage; electrical surface damage; forward turn-on voltage; photo-assisted RIE; reactive ion etching; reverse breakdown voltage; surface composition; surface stoichiometry; Conducting materials; Etching; Gallium nitride; Gold; Plasma applications; Plasma devices; Plasma sources; Plasma temperature; Semiconductor materials; Windows;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984540
