• DocumentCode
    2258333
  • Title

    High performance partially depleted SOI using spike RTA

  • Author

    Kang, Laegu ; Grudowski, Paul ; Dhandapani, Veer ; Jeon, Yongjoo ; Goktepeli, Sinan ; Min, Byoung ; Yeap, Geofiey ; Foisy, Mark ; Anderson, Steven ; Mendicino, Michael ; Venkatesan, Suresh

  • Author_Institution
    Semicond. Products Sector, Motorola Inc., Austin, TX, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    Thinner Si body (700 Å) SOI CMOS was successfully demonstrated with spike RTA on 0.13 μm technology with 45 nm gate lengths and 16Å gate oxide. Spike RTA exhibited excellent short channel effect and lower miller capacitance (Cmiller), resulting in faster circuit speed and lower dynamic power compared to the conventional RTA. Spike RTA also showed comparable floating body effects and stress induced current degradation.
  • Keywords
    CMOS integrated circuits; MOSFET; rapid thermal annealing; silicon-on-insulator; 0.13 micron; 100 Å; 16 Å; 45 nm; Si-SiO2; circuit speed; dynamic power; floating body effects; miller capacitance; partially depleted SOI; short channel effect; spike RTA; stress induced current degradation; thinner Si body SOI CMOS; CMOS integrated circuits; MOSFETs; Rapid thermal annealing; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242888
  • Filename
    1242888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258333