Title :
Effects of SOI film thickness on high-performance microprocessor by 0.13 μm Partially-Depleted SOI CMOS technology
Author :
Yang, Iianan ; Min, Byoung ; Yasuhito, Shiho ; Kang, Laegu ; Walker, Phil ; Mendicino, Michael ; Yeap, Geoffrey ; Foisy, Mark ; Cox, Kevin ; Cartwright ; Venkatesan, Suresh
Author_Institution :
Semicond. Products Sector, Motorola Inc., Austin, TX, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
This paper describes how SOI film thickness affects performance and power consumption of a Partially-Depleted (PD) SOI microprocessor. System level speed/power performance will be compared directly between chips fabricated with different SOI film thickness. The performance improvement is also supported by device level and macro circuit level comparison. Yield issues associated with thinner SOI will also be addressed.
Keywords :
CMOS digital integrated circuits; MOSFET; capacitance; high-speed integrated circuits; leakage currents; microprocessor chips; power consumption; silicon-on-insulator; thin films; 0.13 micron; SOI film thickness; Si-SiO2; high-performance microprocessor; macro circuit level comparison; partially-depleted SOI CMOS technology; power consumption; system level speed; thinner SOI yield; CMOS digital integrated circuits; Capacitance; Leakage currents; MOSFETs; Microprocessors; Power demand; Silicon on insulator technology; Thin films;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242890
